IGN0912CW150 | RF Power Transistor

2025-03-16
IGN0912CW150是一款高功率GaN/SiC射频功率晶体管,专为960-1215 MHz频段的连续波(CW)和脉冲应用设计。该晶体管提供至少150W的连续波输出功率,典型增益超过14dB,效率高达65%。它采用28V电源电压运行,并封装在金属基封装中,具有环氧密封的陶瓷盖,以实现最佳热效率。该产品适用于L波段航空电子IFF & SSR系统,适用于上行链路和下行链路(应答机)以及标准模式S应用。

Integra Technologies

IGN0912CW150

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Part#

射频功率晶体管

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L波段航空电子IFF & SSR系统 ]TACAN/DME系统 ]

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Datasheet

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Please see the document for details

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PL95A1

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IGN0912CW150-REV-PR1-DS-REV-A

Doc-IGN0912CW150-REV-PR1-DS-REV-A

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