IGN1011L1000R2 | RF Power Transistor-IGN1011L1000R2S

PublishTime：2025-03-16

IGN1011L1000R2和IGN1011L1000R2S是高功率GaN-on-SiC射频功率晶体管，专为满足IFF/SSR航空电子系统的独特需求而设计。它们在1030和1090 MHz频率下工作。在ELM模式S脉冲条件下，它们提供至少1000 W的峰值输出功率，典型增益超过17 dB，效率高达68%。它们从50 V电源电压运行。为了最佳热效率，晶体管封装在金属基封装中，带有环氧密封的陶瓷盖。

Brand of Product：	Integra Technologies
Part#：	IGN1011L1000R2 、 IGN1011L1000R2S More Part#
Product Category：	GaN-on-SiC射频功率晶体管 More
Application：	[ L波段航空电子IFF & SSR系统 ][ 适用于上行链路和下行链路（应答机） ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	金属基封装
Language：	English Chinese Chinese and English Japanese
Date of Creation：
Version Number：	IGN1011L1000R2-REV-NC-DS-REV-A
Data Encoding：
Data Size：	455 KB

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