IGN0912CW300 | RF Power Transistor

PublishTime：2025-03-16

IGN0912CW300是一款高功率GaN-on-SiC射频功率晶体管，专为960-1250 MHz频段内的连续波（CW）和脉冲应用设计。该晶体管提供至少300 W的连续波输出功率，典型增益超过15 dB，效率高达70%。它采用36 V电源电压运行，并封装在金属基封装中，带有环氧密封的陶瓷盖，以实现最佳热效率。该晶体管采用GaN on SiC HEMT技术，具有预匹配的输入和输出阻抗，并经过100%射频测试。

Brand of Product：	Integra Technologies
Part#：	IGN0912CW300 More Part#
Product Category：	射频功率晶体管 More
Application：	[ L波段航空电子IFF & SSR系统 ][ 适用于上行链路和下行链路（应答机） ][ 也适用于标准模式S应用 ][ TACAN/DME系统 ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	PL95A1
Language：	English Chinese Chinese and English Japanese
Date of Creation：	未提供
Version Number：	IGN0912CW300-REV-NC-DS-REV-A
Data Encoding：	未提供
Data Size：	447 KB

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