V10170C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A
●FEATURES
■Trench MOS Schottky technology
■ Low forward voltage drop, low power losses
■ High efficiency operation
■ Solder dip 275 °C max. 10 s, per JESD 22-B106
[ high frequency DC/DC converters ][ switching power supplies ][ freewheeling diodes ][ OR-ing diode ][ reverse battery protection ] |
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Datasheet |
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Please see the document for details |
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TO-220AB |
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English Chinese Chinese and English Japanese |
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01-Dec-16 |
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Revision:01-Dec-16 |
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89940 |
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199 KB |
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