EPC2619 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 4.2 mΩ max ID , 29 A Pulsed ID , 164 A DATASHEET

2023-10-23
●Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
●EPC2619 eGaN® FETs are supplied only in passivated die form with solder bars.
●Applications
■DC-DC Converters
■Isolated DC-DC Converters
■Sync Rectification to 12 –20 V
■Battery Chargers, Storage, and Stabilizers
■Solar Optimizers
■Motor Drive
■Power Tools
■eBikes and eScooters
■Robots
■DC Servo
■Medical Robots and DC-DC
■Class D Audio
■USB PD 3.1 Chargers
■Point of Load Converters
●Benefits
■Ultra High Efficiency
■No Reverse Recovery
■Ultra Low QG
■Small Footprint
■Excellent Thermal

EPC

EPC2619

More

Part#

Enhancement Mode Power TransistoreGaN® FET

More

DC-DC Converters ]Isolated DC-DC Converters ]Battery Chargers ]Storage ]Stabilizers ]Solar Optimizers ]Motor Drive ]Power Tools ]eBikes ]eScooters ]Robots ]DC Servo ]Medical Robots ]DC-DC ]Class D Audio ]USB PD 3.1 Chargers ]Point of Load Converters ]

More

Datasheet

More

More

Please see the document for details

More

More

English Chinese Chinese and English Japanese

October, 2023

2.6 MB

- The full preview is over. If you want to read the whole 9 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: