EPC Launches a New Generation of the 80V, 4mOhm EPC2619 eGaN FETs that Doubles Performance
EPC, the world's leader in GaN power FETs and ICs launches the 80V, 4mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC's prior-generation products.
The EPC2619 has an RDS(on) of just 4mOhms in a tiny, 1.5mm x 2.5mm, footprint. The maximum RDS(on) x Area of the EPC2619 is 15mΩ*mm2 – five times smaller than 80V silicon MOSFETs.
This product is designed for a range of motor drive applications. For example 28V – 48V conversion for eBikes, eScooters, and power tools; high density DC-DC converters; solar optimizers; and synchronous rectification converting 12V – 20V for chargers, adaptors, and TV power supplies.
The typical RDS(on) x QGD, which is indicative of power losses in hard-switching applications, is 10 times better than 80V silicon MOSFETs. This enables switching frequencies that are 10 times higher than silicon MOSFETs and without an efficiency penalty, thus producing the highest power density. This makes the EPC2619 ideal for high frequency hard-switching 24V–48V applications, such as those used in buck, buck-boost, and boost converters.
The typical RDS(on) x QOSS, which is indicative of power losses in soft-switching applications, is 87mOhm*nC, two times better than 80V silicon MOSFETs. This makes the EPC2619 ideal for soft-switching applications, such as the primary rectification full bridge for LLC-based DCX DC-DC converters.
"This is just the first product of a new generation of discrete transistors and integrated circuits for EPC. With the launch of the EPC2619, EPC continues to keep GaN power devices on a path reminiscent of Moore's Law," noted Alex Lidow, EPC CEO and co-founder.
The EPC90153 development board is a half bridge featuring the EPC2619 GaN FET. It is designed for 80V maximum device voltage and 20A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed up their product's time to market. This 2" x 2" (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
- 【Datasheet】EPC2619 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2619 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 4.2 mΩ max ID , 29 A Pulsed ID , 164 A DATASHEET
- 【Datasheet】EPC2619 – Enhancement Mode Power Transistor eGaN® FET DATASHEET
- 【Datasheet】EPC2619 – Enhancement Mode Power Transistor eGaN® FET DATASHEET
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