EPC2619 – Enhancement Mode Power Transistor eGaN® FET DATASHEET

PublishTime：2022-11-24

■Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
■EPC2619 eGaN® FETs are supplied only in passivated die form with solder bars.
■Applications
▲DC-DC Converters
▲Isolated DC-DC Converters
▲Sync Rectification to 12 –20 V
▲Battery Chargers, Storage, and Stabilizers
▲Solar Optimizers
▲Motor Drive
▲Power Tools
▲eBikes and eScooters
▲Robots
▲DC Servo
▲Medical Robots and DC-DC
▲Class D Audio
▲USB PD 3.1 Chargers
▲Point of Load Converters
■Benefits
▲Ultra High Efficiency
▲No Reverse Recovery
▲Ultra Low QG
▲Small Footprint
▲Excellent Thermal

Brand of Product：	EPC
Part#：	EPC2619 More Part#
Product Category：	Enhancement Mode Power Transistor 、 eGaN® FET More
Application：	[ DC-DC Converters ][ Isolated DC-DC Converters ][ Battery Chargers ][ Battery Storage ][ Stabilizers ][ Solar Optimizers ][ Motor Drive ][ Power Tools ][ eBikes ][ eScooters ][ Robots ][ DC Servo ][ Medical Robots ][ Class D Audio ][ USB PD 3.1 Chargers ][ Point of Load Converters ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	October, 2022
Version Number：
Data Encoding：
Data Size：	1.3 MB

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