eGaN® FETs and ICs for Hi-Rel Power Solutions
■Commercial-off-the-shelf (COTS) eGaN FETs and ICs are smaller, more efficient, and lower cost than aging silicon devices. EGaN FETs and ICs perform 40 times better electrically than the Rad Hard devices typically used in these systems. This enables entirely new architectures for satellite power and data transmission, robotics, drones, and aeronautical power systems.
■Lidar (Light Distancing and Ranging) systems use pulsed lasers to rapidly provide a high-resolution, 360-degree, three-dimensional images. This technology is increasingly used for autonomous rendezvous and docking in spaceflight as well as for autonomous vehicles and robots. In lidar, the speed of the laser is critical to getting extremely high-resolution images. GaN technology enables the laser signal to be fired at far higher speeds than comparable silicon MOSFET components. GaN-based lidar allows systems to see farther, faster, and better.
■Features
●Proven Reliability
●No parasitic p-n junction diode
●High frequency switching
●Higher power system efficiency
●Small footprint
■Benefits
●Reduce system size and weight
●Higher frequency communications
●Eliminate shielding
●Eliminate solar panels
●Extend the life of the satellite
EPC7019 、 EPC7014 、 EPC7003 、 EPC7004 、 EPC7018 、 EPC7007 、 EPC7020 、 EPC2034C |
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eGaN® FETs 、 eGaN® ICs 、 Commercial-off-the-shelf (COTS) eGaN FETs 、 Commercial-off-the-shelf (COTS) eGaN ICs 、 Rad Hard GaN FETs |
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[ Low-Earth-orbit missions ][ LEO missions ][ Lidar ][ Unmanned aerial vehicles ][ UAVs ][ Robotics ][ Aeronautics ] |
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Application note & Design Guide |
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Please see the document for details |
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LGA;BGA |
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English Chinese Chinese and English Japanese |
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2023/4/11 |
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AB015 |
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587 KB |
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