FSD15N10 TO-252 N Channel Enhancement MOS Field Effect Transistor
■Low on-resistance
■RDS(ON)=85mΩ(Type)@VGS=10V
■RDS(ON)=96mΩ(Type)@VGS=4.5V
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[ Backlight Drive ][ DC-DC Conversion ][ Power Management ] |
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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2023/6/19 |
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522 KB |
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