UTT15N10 15A, 100V N-CHANNEL POWER MOSFET
■DESCRIPTION
●The UTC UTT15N10 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as high current switching applications.
■FEATURES
●RDS(ON) < 125 mΩ @ VGS =10V, ID=7.5A
●RDS(ON) < 150 mΩ @ VGS =4.5V, ID=7.5A
●Low on-state resistance
●Built-in gate protection diode
●High Switching Speed
●High Power and Current Handling Capability
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UTT15N10 、 UTT15N10L-TM3-T 、 UTT15N10G-TM3-T 、 UTT15N10L-TN3-R 、 UTT15N10G-TN3-R |
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Datasheet |
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Please see the document for details |
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TO-251;TO-252 |
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English Chinese Chinese and English Japanese |
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2018/06/24 |
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QW-R209-067.C |
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298 KB |
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