Power Packaging for the GaN Generation of Power Conversion
■The reasoning behind the elimination of the packaging was that GaN devices were initially targeted at the highest performance requirements from early-adopter companies. These companies were primarily looking for speed and size reductions. Traditional power semiconductor packages had significant internal inductance and added a lot of size to a final design in addition to the actual GaN chip.
■Over the next several years the applications and volume expanded by factors of hundreds and then thousands. The customer base for WLCS eGaN devices, which started to include integrated circuits in 2014, rose to over 1,000 active users in over 60 countries. Adoption rates, however varied depending upon the manufacturing capabilities of the companies purchasing the products. In some circumstances, particularly in lower volume applications, the small pitch between terminals as well as the brittle nature of the WLCS caused unwanted design iterations and increased manufacturing cost. For the expansion of GaN for power conversion to get beyond the early adopters, a more user-friendly format needed to be developed. This format, however, needed to preserve the key attributes of small size, low RDS(on), high speed, excellent thermal conductivity, and low cost. In other words, the best package would be the least amount of package technically possible.
EPC23101 、 EPC23102 、 EPC23103 、 EPC23104 、 EPC2302 、 EPC2306 、 EPC2305 、 EPC2308 、 EPC2304 、 EPC2307 |
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GaN-on-Si enhancement mode power transistors 、 eGaN® FETs 、 GaN FETs 、 ePower™ Stage ICs 、 eGaN FETs |
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[ lidar ][ high-end audio amplifiers ][ robots ][ vehicle headlamps ][ high-performance DC-DC converters ] |
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Technical Documentation |
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Please see the document for details |
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PQFN;QFN |
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English Chinese Chinese and English Japanese |
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March 2023 |
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2.3 MB |
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