EPC7003 – Enhancement Mode Power Transistor

2023-05-29
●Rad Hard eGaN® transistors have been specifically designed for critical applications in the high reliability or commercial satellite space environments. GaN transistors offer superior reliability performance in a space environment because there are no minority carriers for a single event, and as a wide band semiconductor there is less displacement for protons and neutrons, and additionally, there is no oxide to breakdown. These devices have exceptionally high electron mobility and a low-temperature coefficient resulting in very low RDS(on) values. The lateral structure of the die provides for a very low gate charge (QG) and extremely fast switching times.
●These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact designs.
●Benefits
■Ultra high efficiency
■Ultra low RDS(on), QG, QGD, QOSS, and 0 QRR
■Ultra small footprint
■Light weight
■Total dose
▲Rated > 1 Mrad
■Single event
▲SEE immunity for LET of 85 MeV/(mg/cm2) with VDS up to 100% of rated breakdown
■Neutron
▲Maintains pre-rad specification for up to 3 x 10¹⁵ neutrons/cm²
■Superior radiation and electrical performance vs. rad hard MOSFETs: smaller, lighter, and greater radiation hardness

EPC

EPC7003

More

Part#

Enhancement Mode Power TransistoreGaN® FETRad Hard eGaN® transistorsGaN transistors

More

critical applications ]commercial satellite space environments ]Space Applications ]DC-DC power ]motor drives ]lidar ]ion thrusters ]Commercial satellite EPS ]avionics ]Deep space probes ]High frequency rad hard DC-DC conversion ]Rad hard motor drives ]

More

Datasheet

More

More

Please see the document for details

More

More

English Chinese Chinese and English Japanese

October, 2022

1.1 MB

- The full preview is over. If you want to read the whole 6 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: