SD023NG N-Channel MOSFET
■This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
■It can be used in a wide variety of applications.
●Features：
■VDS=40V,ID=10A,RDS(ON)<22mΩ@VGS=10V
■Low gate charge.
■Green device available.
■Advanced high cell denity trench technology for ultra low RDS(ON).
■Excellent package for good heat dissipation.
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2021/11/22 |
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2.2 MB |
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