SFX5N65 5A, 650V N-CHANNEL POWER MOSFET
■ These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
●Features
■VDS(V)=650V, ID=5A
■RDS(ON)
◆TYP:2.1Ω@VGS=10V ID=2.5A
◆MAX:2.5Ω
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N-CHANNEL POWER MOSFET 、 N-Channel enhancement mode power field effect transistors |
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[ Switched mode power supplies ][ SMPS ][ Uninterruptible power supply ][ UPS ][ LED lighting power ] |
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Datasheet |
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Please see the document for details |
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TO-220F-3L;TO-251J-3L;TO-251D-3L;TO-252-2L |
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English Chinese Chinese and English Japanese |
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2021/12/22 |
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Rev 1.1 |
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1.6 MB |
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