SFX5N50 5A, 500V N-CHANNEL MOSFET
■ These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction,electronic lamp ballasts based on half bridge topology.
●FEATURES
■5.0A,500V,RDS(on)=1.2Ω@VGS=10V
■Low gate charge
■100% avalanche tested
■Fast switching
■Improved dv/dt capability
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SFX5N50 、 SFFXXNXXE 、 SFP5N50 、 SFF5N50 、 SFD5N50 、 SFD5N50-TR 、 SFU5N50 |
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N-CHANNEL MOSFET 、 N-Channel enhancement mode power field effect transistors |
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[ high efficiency switched mode power supplies ][ electronic lamp ballasts ] |
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Datasheet |
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Please see the document for details |
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TO-252-2L;TO-220F-3L;TO-220-3L;TO-251J-3L |
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English Chinese Chinese and English Japanese |
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2013/8/6 |
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851 KB |
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