3N60, 3N65 Power MOSFET
●FEATURES
■RDS(ON) = 3.6Ω @VGS = 10 V
■Ultra low gate charge ( typical 10 nC )
■Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
■Fast switching capability
■Avalanche energy specified
■Improved dv/dt capability, high ruggedness
[ power supplies ][ PWM motor controls ][ high efficient DC to DC converters ][ bridge circuits ] |
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Datasheet |
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Please see the document for details |
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TO-220;ITO-220;TO-220F;TO-251;IPAK;TO-252;DPAK |
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English Chinese Chinese and English Japanese |
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2017/6/26 |
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450 KB |
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