eGaN® FETs and ICs forHi-Rel Power Solutions
■Commercial-off-the-shelf (COTS) eGaN FETs and ICs are smaller, more efficient, and lower cost than aging silicon devices. eGaN FETs and ICs perform 40 times better electrically than the Rad Hard devices typically used in these systems. This enables entirely new architectures for satellite power and data transmission, robotics, drones, and aeronautical power systems.
■Lidar (Light Distancing and Ranging) systems use pulsed lasers to rapidly provide a high-resolution, 360-degree, three-dimensional images. This technology is increasingly used for autonomous rendezvous and docking in spaceflight as well as for autonomous vehicles and robots. In lidar, the speed of the laser is critical to getting extremely high-resolution images. GaN technology enables the laser signal to be fired at far higher speeds than comparable silicon MOSFET components. GaN-based lidar allows systems to see farther, faster, and better.
■Features
● Proven Reliability
● No parasitic p-n junction diode
● High frequency switching
● Higher power system efficiency
● Small footprint
■Services and Resources
● Data packs: Lot and device specific test information
● Wafer sales
● 95/5 Pb/Sn solder termination available
● Backmetal options available
● EPC has worked with industry leaders to test high-reliability GaN products for military and space applications. These partners offer high-performance packaging and Rad tested and certified products.
◆ EPC Space
◆ Renesas
■Benefits
● Reduce system size and weight
● Higher frequency communications
● Eliminate shielding
● Eliminate solar panels
● Extend the life of the satellite
EPC7019 、 EPC7014 、 EPC7018 、 EPC7007 、 EPC2034C 、 IRHN57250SE |
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[ Low-Earth-orbit (LEO) missions ][ Lidar ][ Unmanned aerial vehicles (UAVs) ][ Robotics ][ Aeronautics ] |
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Application note & Design Guide |
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Please see the document for details |
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LGA 6.05 x 2.3;BGA 0.9 x 0.9;LGA 3.6 x 1.6 |
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English Chinese Chinese and English Japanese |
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2022/6/14 |
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AB015 |
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524 KB |
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