PT2302B 20V N-Channel Enhancement Mode MOSFET
●VDS= 20V
●RDS(ON), Vgs@ 4.5V, Ids@ 2.0A < 50mΩ
●RDS(ON), Vgs@ 2.5V, Ids@ 1.0A < 80mΩ
■Features:
●Advanced trench process technology
●High Density Cell Design For Ultra Low On-Resistance
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2014-11 |
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3.4 MB |
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