High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
●TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
●FEATURES
■Package type: leaded
■Package form: T-1¾
■ Dimensions (in mm): Ø 5
■ Peak wavelength: λ-p = 830 nm
■ High reliability
■ High radiant power
■ High radiant intensity
■Angle of half intensity: ϕ = ± 22°
■Low forward voltage t
■ Suitable for high pulse current operation
■ High modulation bandwidth: f-c = 18 MHz
■ Good spectral matching with CMOS cameras
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High Speed Infrared Emitting Diode 、 infrared, 830 nm emitting diode |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2013/09/03 |
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Rev. 1.4 |
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81297 |
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244 KB |
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