TSHG8400 High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
●FEATURES：
■ Package type: leaded
■ Package form: T-1¾
■ Dimensions (in mm): Ø5
■ Peak wavelength: λp = 830 nm
■ High reliability
■ High radiant power
■ High radiant intensity
■ Angle of half intensity: φ= ± 22°
■ Low forward voltage
■ Suitable for high pulse current operation
■ High modulation bandwidth: fc = 18 MHz
■ Good spectral matching with CMOS cameras
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[ Infrared radiation source for operation with CMOS cameras (illumination) ][ High speed IR data transmission ] |
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Datasheet |
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Please see the document for details |
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T-1¾ |
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English Chinese Chinese and English Japanese |
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03-Sep-13 |
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Rev. 1.4 |
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81297 |
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98 KB |
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