BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2021-10-29
■Description and Applications:
●This MOSFET has been designed to minimize the on-state resistance(R-DS(ON))yet maintain superior switching performance, making it ideal for high efficiency power management applications.
◆General Purpose Interfacing Switch
◆Power Management Functions
◆Analog Switch
■Features and Benefits:
●Low On-Resistance
●Low Gate Threshold Voltage
●Low Input Capacitance
●Fast Switching Speed
●Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
●Halogen and Antimony Free. “Green” Device (Note 3)
●For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at.
●This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.
●An Automotive-Compliant Part is Available Under Separate Datasheet (BSS84WQ)
■Mechanical Data:
●Case: SOT323
●Case Material:Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0
●Moisture Sensitivity: Level 1 per J-STD-020
●Terminal Connections: See Diagram
●Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe) e3
●Weight: 0.006 grams (Approximate

DIODES

BSS84W-7-FBSS84W

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Part#

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Datasheet

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Please see the document for details

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SOT323

English Chinese Chinese and English Japanese

September 2021

Rev. 21-2

DS30205

591 KB

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