CHA6362-QXG 17.7 - 19.7GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package
●Description
■The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.5 Watt output power.It integrates a power detector and allows gain control. ESD protections are included.
■It is designed for Point To Point Radio or K-band Sat-Com application.
■The circuit is manufactured with a pHEMT process, 0.15μm gate length.
■It is supplied in RoHS compliant SMD package.
●Main Features
■Frequency range: 17.7-19.7GHz
■34dBm saturated power
■42dBm OIP3
■22dB gain
■DC bias: Vd=6.0Volt@ Id=1.3A
■QFN 5x6
■MSL3
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Power Amplifier 、 GaAs Monolithic Microwave IC 、 three stage monolithic GaAs high power circuit |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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09,Jul,15 |
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DSCHA6362-QXG5190 |
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1.2 MB |
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