CHA6362-QXG a new High Power Amplifier
The CHA6362-QXG is a 17.7-19.7GHz High Power Amplifier producing 2.5W output power with an integrated power detector.
It allows more than 15dB gain control.
This 5×6 QFN packaged product exhibits a very good power with 34.5dBm Psat and an excellent linearity with 42dBm OIP3. It also offers very good input and output matching.
It includes integral ESD protection.
This circuit, manufactured on a 0.15µm gate length GaAs pHEMT process, is designed for Point to Point radio or K-Band Sat-com applications.
Main features:
Frequency range:17.7-19.7GHz
Linear gain:22dB
OIP3:42dBm
Psat:34.5dBm
Input return loss:14dB
Output return loss:18dB
DC bias:6V@1.34A
Package:QFN 5×6
- +1 Like
- Add to Favorites
Recommend
- UMS Has Designed a 6-42GHz 1W, 2W, 4W Power Amplifiers to Cover the Point To Point Telecom Market
- UMS Enlarges its Telecom Power Amplifier Offer, Boosting your radio with UMS Power Amplifiers
- UMS Proposes New Version of the ADS PPH15X Design Kit
- UMS and Fraunhofer IIS Partner to Offer GaN and GaAs Technologies to EUROPRACTICE Customers
- UMS Announced A New Version of GH15 Gan Technology with Bcb Mechanical Protection and A High-density Mim Capacitor
- UMS Bare Die GaN Power Bars are Available in Hermetic, Plastic, or Flange Packages
- DGA Entrusted UMS to Develop A European GaN-on-SiC Technology with The Realisation of The Art Ku
- UMS Has Introduced 2 GaN Power Bars CHK9013-99F and CHK9014-99F Featuring Wide Band Capability up to 13GHz max
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.