ATP XQ16B8N8GMP9-SO 8GB DDR3-1600 UNBUFFERED NON-ECC DIMM

2020-10-27

The ATP XQ16B8N8GMP9-SO is a high performance 8GB DDR3-1600 Unbuffered NON-ECC SDRAM memory module. It is organized as 1024M x 64 in a 240-pin Dual-In-Line Memory Module (DIMM) package. The module utilizes sixteen 512Mx8 DDR3 SDRAMs in FBGA package. The module consists of a 256-byte serial EEPROM, which contains the module configuration information.

KEY FEATURES
• High Density: 8GB (1024M x 64)
• DIMM Rank: 2 Ranks
• Cycle Time: 1. 25ns (800MHz)
• CAS Latency: 11
• Power supply: 1.35V (1.283V~1.45V)
• Internal self calibration through ZQ
• Burst lengths: 8
• Auto & Self refresh
• Asynchronous Reset
 Minimum Thickness of Golden Finger: 30 Micro-inch
 7.8 μs refresh interval at lower than T-CASE 85°C, 3.9μs refresh interval at 85°C < T-CASE< 95 °C
 Dynamic On Die Termination
 Fly-by topology
 PCB Height: 1.18 inches
 RoHS complian

ATP

XQ16B8N8GMP9-SO

More

Part#

8GB DDR3-1600 UNBUFFERED NON-ECC DIMM

More

More

Datasheet

More

More

Please see the document for details

More

More

English Chinese Chinese and English Japanese

Jan. 22, 2020

793 KB

- The full preview is over. If you want to read the whole 7 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: