High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5 A V20PW45

2022-07-22

●FEATURES:
■Very low profile - typical height of 1.3 mm
■Trench MOS Schottky technology
■Ideal for automated placement
■Low forward voltage drop, low power losses
■High efficiency operation
■Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
■AEC-Q101 qualified available
◆Automotive ordering code; base P/NHM3

Vishay

V20PW45

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Part#

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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low voltage high frequency inverters ]DC/DC converters ]

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Datasheet

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Please see the document for details

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English Chinese Chinese and English Japanese

2017-06-01

Revision01-Jun-17

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