IRHLUB770Z4 JANSR2N7616UB RADIATION HARDENED POWER MOSFET
●Description
■IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
■The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available.
●Features
■5V CMOS and TTL Compatible
■Fast Switching
■Single Event Effect (SEE) Hardened
■Low Total Gate Charge
■Simple Drive Requirements
■Hermetically Sealed
■Ceramic Package
■Surface Mount
■Light Weight
■Complementary P-Channel Available-IRHLUB7970Z4, IRHLUBN7970Z4 IRHLUBC7970Z4, IRHLUBCN7970Z4
■ESD Rating: Class 0 per MIL-STD-750, Method 1020
IRHLUB770Z4 、 JANSR2N7616UB 、 IRHLUBN770Z4 、 IRHLUBC770Z4 、 IRHLUBCN770Z4 、 IRHLUB730Z4 、 IRHLUB7970Z4 、 IRHLUBN7970Z4 、 IRHLUBC7970Z4 、 IRHLUBCN7970Z4 、 JANSR2N7616UBN 、 JANSF2N7616UBN 、 JANSR2N7616UBC 、 IRHLUBN730Z4 、 JANSF2N7616UBC 、 JANSR2N7616UBCN 、 JANSF2N7616UBCN 、 IRHLUBCN730Z4 、 IRHLUBC730Z4 |
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Datasheet |
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Please see the document for details |
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TO-39 |
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English Chinese Chinese and English Japanese |
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2019-02-04 |
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PD-95813I |
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1.5 MB |
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