UJ3N120035K3S 35mΩ - 1200V SiC Normally-On JFET

2020-03-26
United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (RDS(ON))

and gate charge (QG) allowing for low conduction and switching loss. The

device normally-on characteristics with low RDS(ON) at VGS = 0 V is also

ideal for current protection circuits without the need for active control,

as well as for cascode operation.

UnitedSiC

UJ3N120035K3SUJ3D1220KSD

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Part#

35mΩ - 1200V SiC Normally-On JFET

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Over current protection circuits ]DC-AC inverters ]Switch mode power supplies ]Power factor correction modules ]Motor drives ]Induction heating ]

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Datasheet

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Halogen Free 、 RoHS

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Please see the document for details

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TO-247-3L

English Chinese Chinese and English Japanese

December 2018

Rev. B

726 KB

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