CS6N60F A9TY Silicon N-Channel Power MOSFET
■General Description:
●CS6N60F A9TY,the silicon N-channel Enhanced VDMOSFETs,is obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F,which accords with the RoHS standard.
■Features:
●Fast Switching
●LoW ON Resistance(Rdson≤1.7Ω)
●LOW Gate Chalge (Typical Data:17nC)
●Low Reverse tr'ansfer capacitances(Typical:2.7pF)
●100%Single Pulse avalanche energy Test
Datasheet |
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Please see the document for details |
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TO-220F |
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English Chinese Chinese and English Japanese |
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2015 |
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V01 |
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461 KB |
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