CS45N06 A3 Silicon N-Channel Power MOSFET
●General Description：
■CS45N06 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the RoHS standard.
●Features：
■Fast Switching
■LowON Resistance(Rdson≤16mΩ)
■Low Gate Charge
■Low Reverse transfer capacitances
■100%Single Pulse avalanche energy Test
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[ Power switch circuit ][ adaptor ][ charger ][ LED backlight driver ] |
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Datasheet |
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Please see the document for details |
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TO-251 |
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English Chinese Chinese and English Japanese |
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2018 |
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V01 |
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662 KB |
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