CS90N03 A3 data sheet
●General Description: CS90N03 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the RoHS standard.
●Features:
■Fast Switching
■Low ON Resistance(Rdson≤5.5mΩ)
■Low Gate Charge
■Low Reverse transfer capacitances
■100% Single Pulse avalanche energy Test
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Silicon N-Channel Power MOSFET 、 silicon N-channel Enhanced VDMOSFETs |
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Datasheet |
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Please see the document for details |
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TO-251 |
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English Chinese Chinese and English Japanese |
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2019/07/10 |
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629 KB |
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