UMS Lannched the CHA7452-99F, a New State-of-the-art Q-Band 35.5-40.5GHz GaN HPA Exhibiting 9W Output Power
The CHA7452-99F is a 35.5-40.5GHz GaN HPA exhibiting 9W output power. This product exhibits a high PAE OF 25%, 29dB Linear Gain, and low consumption of 290mA@20V. With its low biasing voltage, the CHA7452-99F maintains a junction temperature below 160℃ even in saturation.
Fig.1
Proposed in a dying form, the CHA7452-99F has been designed on a UMS proprietary 0.15µm GaN technology.
Fig.2
Its features make it an ideal candidate for your Space SATCOM projects in Q-Band and for all demanding microwave applications.
Fig.3
- 【Datasheet】37.5-41.5GHz 9W Q-Band HPA GaN Monolithic Microwave IC Advanced Information
- 【Datasheet】CHA7452-99F 35.5-4 0.5GHz 9W High Power Amplifier GaN Monolithic Microwave IC
- 【Datasheet】CHA7452-99F 35.5-4 0.5GHz 9W High Power Amplifier GaN Monolithic Microwave IC
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