UMS Lannched the CHA7452-99F, a New State-of-the-art Q-Band 35.5-40.5GHz GaN HPA Exhibiting 9W Output Power
The CHA7452-99F is a 35.5-40.5GHz GaN HPA exhibiting 9W output power. This product exhibits a high PAE OF 25%, 29dB Linear Gain, and low consumption of 290mA@20V. With its low biasing voltage, the CHA7452-99F maintains a junction temperature below 160℃ even in saturation.
Fig.1
Proposed in a dying form, the CHA7452-99F has been designed on a UMS proprietary 0.15µm GaN technology.
Fig.2
Its features make it an ideal candidate for your Space SATCOM projects in Q-Band and for all demanding microwave applications.
Fig.3
- 【Datasheet】37.5-41.5GHz 9W Q-Band HPA GaN Monolithic Microwave IC Advanced Information
- 【Datasheet】CHA7452-99F 35.5-4 0.5GHz 9W High Power Amplifier GaN Monolithic Microwave IC
- 【Datasheet】CHA7452-99F 35.5-4 0.5GHz 9W High Power Amplifier GaN Monolithic Microwave IC
- 我们最新发布的国防产品精选
- 我们最新发布的国防产品精选
- UMS 射频MMIC芯片选型指南
- UMS 射频MMIC芯片选型指南
- +1 Like
- Add to Favorites
Recommend
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
