37.5-41.5GHz 9W Q-Band HPA GaN Monolithic Microwave IC Advanced Information
●UMS develops a four stages High Power Amplifier operating between 37.5 and 41.5 GHz and providing more than 8W of saturated output power and 22% of power added efficiency. The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7452-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.
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Q-Band HPA 、 GaN Monolithic Microwave IC 、 Monolithic Microwave IC 、 four stages High Power Amplifier |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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18 Feb 23 |
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AI222630248;AI2226 |
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1.6 MB |
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