CHA7452-99F 35.5-4 0.5GHz 9W High Power Amplifier GaN Monolithic Microwave IC
■The CHA7452-99F is a four stage High Power Amplifier operating between 35.5 and 40.5 GHz and providing typically 9 W of saturated output power and 24 % of power added efficiency. The typical power supply is 20V/290 mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7452-99F provides a junction temperature below 160 °C, even in saturation. The circuit is manufactured on a space evaluated 0.15 μm gate length GaN-on-SiC HEMT process and is available in bare die form.
■It is firstly dedicated to space applications and well suited for a wide range of microwave applications and systems.
●Main Features
■Frequency range: 35.5 – 40.5 GHz
■High output power: 9 W
■High PAE: 24 %
■Linear Gain: 29 dB
■DC bias: Vd=20V @Id=290 mA
■Chip size: 3.6x2.9 mm
■Available in bare die form
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High Power Amplifier 、 HPA 、 GaN Monolithic Microwave IC 、 four stage High Power Amplifier |
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[ microwave applications ][ microwave systems ][ space applications ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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27 Jan 23 |
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CHA74523027 |
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2.2 MB |
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