Try GaN GH15 MPW With UMS EUROPEAN LEADER in RF MMIC products and foundry services
●GH15 is a 0.15μm HEMT GaN-on-SiC substrate technology for very high power applications up to 40GHz. With GH15, you will be able to design your own circuits (HPA, LNA, or more complex function). You will be supported by excellent PDK and models:
■highly accurate non-linear scalable models supporting electro-thermal capabilities
■Stack for EM simulations
■DRC for layout rules verification.
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2022/12/21 |
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648 KB |
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