GH15-1x Foundry Process Data Sheet
■This 0.15μm HEMT process is optimized for high power applications up to 45GHz. The good HEMT noise performance allows also LNA design.
■The process includes two metal interconnect layers, precision TaN resistors, high values TiWSi resistors, MIM capacitors with standard and high density, air-bridges and via-holes through the substrate.
■GH15 is available in four technology versions:
▲GH15-10, Space evaluated
▲GH15-11, providing additional options, such as High Density MIM 355pF/mm2 and BCB mechanical protection for compatibility with plastic molded packaging.
▲GH15-12, providing mechanical and humidity protection
▲GH15-13, with thinner substrate specially optimized for Q-band applications
●Main Features
■0.15μm GaN on SiC HEMT process
■Power density: 4.2 W/mm
■TaN and TiWSi resistors
■M.I.M. capacitors & inductors
■Air bridges
■Via-holes
■Operation Vds= 25V
■Vbds > 60V
■Wafer thickness: 70/50 μm
■Wafer diameter: 100mm
■Schottky diodes
|
|
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
|
2024/6/10 |
|
|
|
|
|
150505_DS GaN GH25 Process_5125 |
|
|
224 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
