Try GaN GH15 MPW With UMS EUROPEAN LEADER in RF MMIC products and foundry services 2024-Fall

2024-03-08
●UMS launches a shared foundry run on its GH15 GaN process.
●GH15 is a 0.15μm HEMT GaN-on-SiC substrate technology for very high power applications up to 40GHz. With GH15, you will be able to design your own circuits (HPA, LNA, or more complex function). You will be supported by excellent PDK and models:
■highly accurate non-linear scalable models supporting electro-thermal capabilities,
■Stack for EM simulations,
■DRC for layout rules verification.

UMS

GH15GH15-11

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GH15 GaN process

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Technical Documentation

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2024/2/2

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