4A/650V N-Channel Power MOSFET F4N65 with Fast Switching Time, Low Gate Charge and Low On-state Resistance
The F4N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This N-CHANNEL POWER MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
Features
RDS(ON)≤2.6Ω@VGS=10V, ID=2.0A
Fast switching capability
Avalanche energy tested
Improved dv/dt capability, high ruggedness
Mechanical data
Case: ITO-220ABW
pprox. Weight: 2.1g (0.07oz)
Lead-free finish, RoHS-compliant
Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
Notes:
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=100mH, IAS=4.1A, VDD=50V, RG=25Ω, Starting TJ=25℃
4. ISD≤10A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25℃
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
Notes:
1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature
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