12A/600V N-Channel Power MOSFET F12N60 with Fast Switching Time, Low Gate Charge, Low On-State Resistance and High Rugged Avalanche CAharacteristics

2024-03-06 JingDao Microelectronics
power MOSFET,N-CHANNEL power MOSFET,F12N60

The F12N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This N-CHANNEL power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.



Features  

RDS(ON)≤0.75Ω@VGS=10V, ID=12A

Fast switching capability

Avalanche energy tested 

Improved dv/dt capability, high ruggedness 


Mechanical data

Case: ITO-220ABW

pprox. Weight: 2.1g ( 0.07oz) 

Lead free finish, RoHS compliant

Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".


ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)

Notes: 

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  Absolute maximum ratings are stress ratings only and functional device operation is not implied.  

2. Repetitive Rating: Pulse width limited by maximum junction temperature. 

3. L=10mH, IAS=6.7A, VDD=50V, RG=25Ω, Starting TJ=25℃  

4. ISD≤12A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25℃


THERMAL DATA

ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)

Notes:  

1. Pulse Test: Pulse width ≤300μs, Duty cycle ≤2%. 

2. Essentially independent of operating temperature.

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