1200V/35A SiC MOSFET QX3L080N120SC1 with Highest Efficiency, Faster Operation Frequency, Increased Power Density, Reduced EMI and Reduced System Size
The SiC MOSFET QX3L080N120SC1 uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features
1200V@TJ=175℃
Max RDS(on)=96mΩ at VGS=20V, ID=20A
High Speed Switching with Low Capacitance
100% Avalanche Tested
AEC−Q101 Qualified and PPAP Capable
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)
Applications
Automotive Auxiliary Motor Drive
Automotive On Board Charger
Automotive DC−DC Converter for EV/Automotive DC−DC Converter for HEV
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise noted)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise noted)
ORDERING INFORMATION
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