QX200T10U 1000V, 200A Field Stop Trench IGBT,low Eoff
■AEC−Q101 Qualified
■Positive Temperature Coefficient
■Easy Paralleling
■Short Circuit Rated
■Very Low Saturation Voltage: VCE(SAT) = 2.1 V(Typ.) @ IC = 200 A
■Optimized for Motor Control Applications
[ Motor Control ][ Solar ][ General Power Modules ][ Inverter ] |
|
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
2023/8/3 |
|
|
|
|
|
405 KB |
- +1 Like
- Add to Favorites
Recommend
- 1200V/35A SiC MOSFET QX4L080N120SC1 Provides Superior Switching Performance and Higher Reliability Compared to Silicon
- 1200V/35A SiC MOSFET QX3L080N120SC1 with Highest Efficiency, Faster Operation Frequency, Increased Power Density, Reduced EMI and Reduced System Size
- 1200V/600A Half Bridge IGBT Power Module ED600X12T4ALP with Low Saturation Voltage and Low Switching Losses
- 使用压接技术生产IGBT有哪些优势?∣视频
- How Does Press-fit Technology Elevate IGBT Production?
- Working Characteristics of IGBT
- Application Scope and Market of IGBT
- Renesas’ the next generation IGBT/AE5 offers high efficiency and ease of use
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.