30V/85A N-channel Enhanced Mode Power MOSFET SW051R03VLT for Synchronous Rectification, Li Battery Protect Board, Motor Drives
SEMIPOWER N-channel enhanced mode power MOSFET SW051R03VLT is produced with the advanced technology of SAMWIN. This technology enables the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge, and especially excellent avalanche characteristics.
Features
High ruggedness
Low RDS(ON):
(Typ 7.3mΩ)@VGS=4.5V
(Typ 4.7mΩ)@VGS=10V
Low Gate Charge (Typ 43nC)
Improved dv/dt Capability
100% Avalanche Tested
Application
Synchronous Rectification
Li Battery Protect Board
Motor Drives
Absolute maximum ratings
Thermal characteristics
Electrical characteristic (TJ=25℃ unless otherwise specified)
Source to drain diode ratings characteristics
Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L =0.5mH, IAS=22A, VDD=25V, RG=25Ω, Starting TJ=25℃
3. ISD≤30A, di/dt=100A/μs, VDD≤BVDSS, Staring TJ=25℃
4. Pulse Test : Pulse Width≤300μs, duty cycle≤2%.
5. Essentially independent of operating temperature.
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