30V/250A N-channel Enhanced Mode Power MOSFET SW015R03VLT for Synchronous Rectification, Li Battery Protect Board and Inverter
This SEMIPOWER N-channel Enhanced mode power MOSFET SW015R03VLT is produced with the advanced technology of SAMWIN. This technology enables the power MOSFET to have better characteristics, including fast switching time, low resistance, low gate charge, and especially excellent avalanche characteristics.
Features
High ruggedness
Low RDS(ON):
(Typ 1.5mΩ)@VGS=4.5V
(Typ 1.2mΩ)@VGS=10V
Low Gate Charge (Typ 315nC)
Improved dv/dt Capability
100% Avalanche Tested
Application
Synchronous Rectification
Li Battery Protect Board
Inverter
Absolute maximum ratings
Thermal characteristics
Electrical characteristic (TJ=25℃ unless otherwise specified)
Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L =0.5mH, IAS=80A, VDD=30V, RG=25Ω, Starting TJ=25℃
3. ISD≤45A, di/dt=100A/μs, VDD≤ BVDSS, Staring TJ=25℃
4. Pulse Test : Pulse Width≤300μs, duty cycle≤2%.
5. Essentially independent of operating temperature.
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