SW051R03VLT N-channel Enhanced mode TO-252 MOSFET

2024-04-17
●General Description ■This power MOSFET is produced with advanced technology of SAMWIN. ■This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. ●Features ■High ruggedness ■Low RDS(ON) (Typ 7.3mΩ)@VGS=4.5V RDS(ON)(Typ 4.7mΩ)@VGS=10V ■Low Gate Charge (Typ 43nC) ■Improved dv/dt Capability ■100% Avalanche Tested ■Application:Synchronous Rectification,Li Battery Protect Board, Motor Drives

SEMIPOWER

SW051R03VLTSW D 051R03VLT

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Part#

N-channel Enhanced mode TO-252 MOSFETpower MOSFET

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Li Battery Protect Board ]Motor Drives ]

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Datasheet

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Please see the document for details

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TO-252

English Chinese Chinese and English Japanese

Sep. 2023

Rev. 0.6

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