Maplesemi‘s 60V/80A N-Channel MOSFET SLD80N06T Using Advanced Planar Stripe TRENCH Technology
This Power MOSFET SLD80N06T is produced using Maplesemi's advanced planar stripe TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
N-Channel MOSFET SLD80N06T Features
- N-Channel: 60V 80A
RDS(on)Typ= 5.1mΩ@VGS=10V
- Very Low On-resistance RDS(ON)
- Low Crss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Application
PWM Application
Load Switch
Power Management
Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Electrical Characteristics (TC=25℃ unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: TJ=25℃, VDD=30V, VG=10V, RG=25Ω, L=0.5mH, IAS=23A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
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