SLD80N03T 30V N-Channel MOSFET
■This Power MOSFET is produced using Maplesemi's advanced TRENCH technology.
■This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
●Features
■N-Channel:30V 80A
◆RDS(on) Typ=4.0mΩ@VGS=10V
◆RDS(on) Typ=7.0mΩ@VGS=4.5V
■Very Low On-resistance RDS(ON)
■Low Crss
■Fast switching
■100% avalanche tested
■Improved dv/dt capability
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[ Load Switch ][ Power Management ] |
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Datasheet |
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Please see the document for details |
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D-Pak |
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English Chinese Chinese and English Japanese |
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Jun.2022 |
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Rev2.0 |
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1.1 MB |
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