MapleSemi‘s 100V/0.17A N-Channel MOSFET SLV123TK Provide Superior Switching Performance
This Power MOSFET is produced using Maplesemi‘s advanced planar stripe TRENCH technology. This advanced technology has been specially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
N-Channel MOSFET Features
- N-Channel:100V 0.17A
RDS(on)Typ= 4Ω@VGS=10V
RDS(on)Typ= 6Ω@VGS=10V
- Very Low On-resistance RDS(ON)
- Low Crss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Application
Battery Protection
Load Switch
Power Management
Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Electrical Characteristics (TC=25℃ unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Pulse Test: Pulse Width≤300μs, Duty
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