SLD840F/SLU840F 500V N-Channel MOSFET Data sheet
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
|
|
Datasheet |
|
LEAD FREE 、 RoHS |
|
Please see the document for details |
|
|
|
|
|
D-PAK;I-PAK |
|
English Chinese Chinese and English Japanese |
|
January. 2018 |
|
Rev. 01 |
|
|
|
479 KB |
- +1 Like
- Add to Favorites
Recommend
- Maplesemi‘s 60V/80A N-Channel MOSFET SLD80N06T Using Advanced Planar Stripe TRENCH Technology
- Maplesemi‘s 30V/150A N-Channel MOSFET SLM150N03T Using Maplesemi‘s Advanced Planar Stripe TRENCH Technology
- MapleSemi‘s 100V/0.17A N-Channel MOSFET SLV123TK Provide Superior Switching Performance
- 50A/60V N-Channel MOSFET SLM50N06T is Used for PWM Application, Load Switch, and Power Management
- A Brief History of Supercascodes
- The Differences between MOS Tube and IGBT Tube
- Vincotech‘s fastPACK 0 MOS and fastPACK 1 MOS Modules Featuring Cost-effective H-bridge Topology with MOSFETs
- MOS Switch Tube Selection and Principle Application
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.