A New Powerful 17.3-20.3GHz GaN High Power Amplifier for Space Ka Downlink Satcom Applications
The UMS CHA8252-99F is a 3 stage 17.3-20.3GHz GaN High Power Amplifier（GaN HPA）.
This product exhibits 10W output power with a high PAE of more than 35% @ 16dBm input Power.
This circuit also features an excellent linear gain of 31dB.
Fig.1 The CHA8252-99F is a 3 stage 17.3-20.3GHz GaN High Power Amplifier
The CHA8252-99F is dedicated to Ka-Band Downlink Satcom applications, compatible with space constraints due to biasing @ 18V.
It is designed on a 0.15µm GaN HEMT proprietary technology.
Fig.2
Main features:
●Frequency range: 17.3-20.3GHz
●PAE: > 35% @ 16dBm Input Power
●Linear Gain: 31dB
●Pout: 40.5dBm @ 16dBm Input Power
●Return losses:Input 9dB / Output 7dB
●DC bias: 18V@300mA
●Chip size: 5x4x0.07mm
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