UMS Newly Launched CHK8201-SYA Transistor with Covering DC to 4GHz and A Linear Gain of 22dB
The CHK8201-SYA is a powerful 45W broadband GaN power bar covering DC to 4GHz. The product exhibits an excellent PAE of 55% and a linear gain of 22dB. It shows consumption of 50V@200mA.
This Transistor is proposed in a ceramic metal flange package. It is dedicated to many applications from Telecom, and radar to Space ones.
Main features:
●GaN Power in hermetic Ceramic-metal flange package
●Broadband performance: DC-4GHz
●High Psat: 45W
●PAE: 55%
●Small signal Gain: 22dB
●Associated gain at max PAE: 17dB
Main applications:
●Multipurpose applications
●Radar
●Telecommunications
- 【Datasheet】CHK8201-SYA 45W GaN packaged power bar GaN HEMT Microwave Transistor in flange package
- 【Datasheet】CHK8201-SYA 45W GaN packaged power bar: GaN HEMT Microwave Transistor in flange package
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