CHK8201-SYA 45W GaN packaged power bar GaN HEMT Microwave Transistor in flange package
■The CHK8201-SYA is an unmatched power bar microwave transistor, which integrates two CHK8101a99F power bars packaged together with individual access possible, that produces 45W of combined output power.
■It is designed for a wide range of RF power applications up to 4 GHz. It is well suited for multi-purpose applications such as radar and telecommunication.
■The applied GaN on SiC technology is a space evaluated HEMT process with 0.50 μm gate length. It requires an external matching circuitry.
■It is supplied in a hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.
●Main Features
■Broadband performances: DC-4GHz
■45W Pout for +29dBm input power
■22dB of linear gain at 0dBm input power
■DC bias: VDS=50V@ID_Q=200mA
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GaN HEMT Microwave Transistor 、 unmatched power bar microwave transistor 、 transistor |
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[ radar ][ telecommunication ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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21 Sep 22 |
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DSCHK8201-SYA2264 |
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1 MB |
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